Novel GaAs/AlAs tunnel structures as microwave detectors
Novel GaAs/AlAs tunnel structures as microwave detectors
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作为微波探测器的新型 GaAs/AlAs 隧道结构
DOI：
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发表时间：
1992
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通讯作者：
I. Dale
中科院分区：
文献类型：
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作者：
R. T. Syme;M. Kelly;M. Robinson;R. Smith;I. Dale
我们设计了（使用专门开发的模拟包）一些新颖的 GaAs/AlAs 隧道结构，这些结构具有高度不对称的电流-电压 (I-V) 特性，可用作微波探测器。这种不对称性是由于单个 AlAs 隧道势垒两侧的间隔区域不相等而引起的。最近的设计具有 9.4 GHz 的微波性能，在电压灵敏度和动态范围方面与零偏置肖特基二极管相匹配，但具有更好（等于更弱）的温度依赖性。新二极管的电压灵敏度和动态范围也优于现有的锗背二极管，尽管灵敏度随温度的变化并不那么小。不过，预计这一差距可以缩小。新型二极管的主要竞争预计将来自最近开发的平面掺杂势垒检测器（PDB）二极管，该二极管结合了肖特基二极管的高灵敏度和动态范围以及随温度变化稍弱的特性。然而，我们的二极管仍然预计具有较弱的温度依赖性，并且由于与控制 PDB 二极管中的 p+ 掺杂尖峰相关的问题，它们似乎更容易、更便宜地制造：我们已经成功地通过 MBE 和 MOCVD 制造了结构。在本文中，我们描述了二极管的设计，并通过详细的直流图演示了上述要点。以及一种 MBE 生长结构和一种 MOCVD 生长结构的微波性能。
We have designed (using a specially developed simulation package) some novel GaAs/AlAs tunnel structures with highly asymmetric current-voltage (I-V) characteristics for use as microwave detectors. The asymmetry arises from having unequal spacer regions either side of a single AlAs tunnel barrier. Recent designs have a microwave performance at 9.4 GHz which matches a zero-bias Schottky diode in terms of voltage sensitivity and dynamic range, but with a much better (equals weaker) temperature dependence. The new diodes also out-perform existing germanium back diodes in their voltage sensitivity and dynamic range, although the variation of sensitivity with temperature is not quite as small; it is expected however that this gap can be closed. The main competition for the new diodes is expected to come from the recently developed planar-doped-barrier detector (PDB) diodes, which combine the high sensitivity and dynamic range of the Schottky diode with a somewhat weaker variation with temperature. However, our diodes are still expected to have a weaker temperature dependence, and they would seem to be more easily and cheaply manufactured due to the problems associated with control over the p+ doping spike in a PDB diode: we have successfully made structures by both MBE and MOCVD. In this paper, we describe the design of our diodes and demonstrate the above points with detailed graphs of d.c. and microwave performance for one MBE-grown structure and one MOCVD-grown structure.