Control of relative tunneling rates in single molecule bipolar electron transport.
Control of relative tunneling rates in single molecule bipolar electron transport.
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DOI：
10.1103/physrevlett.93.236802
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发表时间：
2004-12
影响因子：
8.6
通讯作者：
Shiwei Wu;G. Nazin;Xi Chen;X. Qiu;W. Ho
中科院分区：
文献类型：
--
作者：
Shiwei Wu;G. Nazin;Xi Chen;X. Qiu;W. Ho
研究了相对电子隧穿速率对双势垒单分子结中电子输运的影响。通过将扫描隧道显微镜针尖定位在吸附在NiAl（110）表面上生长的薄氧化物膜上的铜酞菁分子上方来定义该结。通过调整尖端分子分离，通过两个障碍，真空和氧化物的隧穿率的比例进行控制。这导致与分子的不同电子振动态相关的各个传导通道的相对强度发生显著变化。
The influence of relative electron tunneling rates on electron transport in a double-barrier single-molecule junction is studied. The junction is defined by positioning a scanning tunneling microscope tip above a copper phthalocyanine molecule adsorbed on a thin oxide film grown on the NiAl(110) surface. By tuning the tip-molecule separation, the ratio of tunneling rates through the two barriers, vacuum and oxide, is controlled. This results in dramatic changes in the relative intensities of individual conduction channels, associated with different vibronic states of the molecule.