Exchange bias in epitaxial and polycrystalline thin film Ru2MnGe/Fe bilayers
Exchange bias in epitaxial and polycrystalline thin film Ru2MnGe/Fe bilayers
复制标题
DOI：
10.1063/1.4939092
复制
发表时间：
2015-12-28
影响因子：
3.2
通讯作者：
Arenholz, Elke
中科院分区：
文献类型：
--
作者：
Balluff, Jan;Meinert, Markus;Arenholz, Elke
我们报告的反铁磁Heusler化合物Ru 2 MnGe和Fe的薄膜双层，以及由此产生的交换偏置场在低温下，其温度依赖性。在3 K时，Ru_2 MnGe/Fe双层膜的交换偏置场高达680 Oe。随着温度的升高，交换偏置场线性减小，在130 K时消失。此外，我们生长的多晶Ru_2MnGe显示出高达540 Oe的交换偏置场，其在30 K附近消失。通过添加一个非常薄的中间层Mn，交换偏置场的多晶样品已增加了约40%。我们讨论了外延和多晶薄膜的磁性和晶体学性质之间的差异，并比较我们的结果已经发表的工作在这个系统上。(C)2015 AIP Publishing LLC.
We report on thin film bilayers of the antiferromagnetic Heusler compound Ru2MnGe and Fe, as well as the resulting exchange bias field at low temperatures and its temperature dependence. Epitaxial Ru2MnGe/Fe bilayers show an exchange bias field up to 680Oe at 3K. For increasing temperatures, a linearly decreasing exchange bias field is found, which vanishes at 130K. Furthermore, we grew polycrystalline Ru2MnGe showing an exchange bias field up to 540 Oe, which vanishes around 30K. By adding a very thin intermediate layer of Mn, the exchange bias field for polycrystalline samples has been increased by about 40%. We discuss differences between the epitaxial and polycrystalline films regarding magnetic and crystallographic properties and compare our results to already published work on this system. (C) 2015 AIP Publishing LLC.