High-power operation of a wide-striped InGaN laser diode array
High-power operation of a wide-striped InGaN laser diode array
复制标题
DOI：
10.1117/12.907936
复制
发表时间：
2012-02
期刊：
影响因子：
--
通讯作者：
K. Samonji;S. Yoshida;H. Hagino;K. Yamanaka;S. Takigawa
中科院分区：
文献类型：
--
作者：
K. Samonji;S. Yoshida;H. Hagino;K. Yamanaka;S. Takigawa
我们成功地展示了一种在连续波工作下光输出功率为6.3 W的多条纹ingan基激光二极管（LD）阵列。LD阵列在没有任何冷却系统的传统金属封装上运行。作为InGaN LD阵列的世界最高功率工作归功于热优化布局设计，利用了高效的宽条纹发射器。
We successfully demonstrated a multi-striped InGaN-based laser diode (LD) array with an optical output power of 6.3 W under continuous wave operation. The LD array was operated on a conventional metal package without any cooling system. The world highest power operation as InGaN LD array is attributed to thermally optimized layout design taking advantage of highly efficient wide-striped emitters.