TUNNELING DENSITY OF STATES FOR A SUPERCONDUCTOR CARRYING A CURRENT
TUNNELING DENSITY OF STATES FOR A SUPERCONDUCTOR CARRYING A CURRENT
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DOI：
10.1103/physrev.137.a783
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发表时间：
1965-01-01
期刊：
影响因子：
--
通讯作者：
FULDE, P
中科院分区：
文献类型：
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作者：
FULDE, P
在超导膜中流动的电流具有破坏成对的倾向，类似于超导体中的顺磁杂质的效果。用Abrikosov，Gorkov和Maki的绿色函数方法计算了电流对正常超导隧道结的隧穿态密度的影响，发现电流对正常超导隧道结的隧穿态密度的影响与顺磁杂质的隧穿态密度的影响相同（对于较短的平均自由程）。导出了平行于结的电流与等效顺磁杂质浓度之间的简单关系。在一个实验中，使不同电流量通过样品，得到的信息与在另一个实验中仅通过制备具有不同杂质浓度的不同样品获得的信息相同。
A current flowing in a superconducting film has a tendency to break pairs similar to the effect of paramagnetic impurities in a superconductor. The effect of the current on the tunneling density of states for a normal-superconducting tunneling junction has been computed by the Green's-function method of Abrikosov, Gorkov, and Maki, and found to be identical (for a short mean free path) to that of paramagnetic impurities. A simple relationship between the current parallel to the junction and the equivalent paramagnetic-impurity concentration is derived. Passing various amounts of current through the sample in the one experiment gives the same information as is obtainable in the other experiment only by preparing different samples with various impurity concentrations.