Pyroelectric and photovoltaic properties of Nb-doped PZT thin films
Pyroelectric and photovoltaic properties of Nb-doped PZT thin films
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DOI：
10.1063/5.0039593
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发表时间：
2021-04-01
期刊：
影响因子：
6.1
通讯作者：
Whatmore, R. W.
中科院分区：
文献类型：
--
作者：
Berenov, A.;Petrov, P.;Whatmore, R. W.
掺Nb的锆钛酸铅(PZT)薄膜，最高可达12at。在600℃的衬底温度下，从氧化物PZT和金属Nb靶上共溅射了%的Nb，最高可达4at。在钙钛矿结构中掺入%%的Nb，形成B位阳离子空位进行电荷补偿。在固溶体区域内，Nb掺杂降低了(111)PZT择优取向。薄膜的铁电响应受样品中较大的内场(如12at中的-84.3kV cm(-1))的影响。%掺钕薄膜)。沉积时未极化的薄膜由于自极化而表现出较大的热释电系数。热释电系数随Nb掺杂的增加而增大，且与外加偏压呈现出复杂的依赖关系。在薄膜中观察到光伏效应。光电流值随着A/B比的增大而增大。光伏-热释电联合效应使被测电流值在光照时增加了高达47%。
Nb-doped lead zirconate titanate (PZT) films with up to 12 at. % of Nb were co-sputtered from oxide PZT and metallic Nb targets at a substrate temperature of 600 degrees C. Up to 4 at. % of Nb was doped into the perovskite structure with the formation of B-site cation vacancies for charge compensation. The preferential (111) PZT orientation decreased with Nb-doping within the solid solution region. The ferroelectric response of the films was affected by the large values of the internal field present in the samples (e.g., -84.3 kV cm(-1) in 12 at. % Nd doped films). As-deposited unpoled films showed large values of the pyroelectric coefficient due to self-poling. The pyroelectric coefficient increased with Nb-doping and showed a complex dependence on the applied bias. The photovoltaic effect was observed in the films. The value of the photocurrent increased with the A/B ratio. The combined photovoltaic-pyroelectric effect increased the values of the measured current by up to 47% upon light illumination.