FIELD-EFFECT TRANSISTORS USING ALKYL SUBSTITUTED OLIGOTHIOPHENES
FIELD-EFFECT TRANSISTORS USING ALKYL SUBSTITUTED OLIGOTHIOPHENES
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DOI：
10.1063/1.105158
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发表时间：
1991-04-08
影响因子：
4
通讯作者：
SAKAKI, H
中科院分区：
文献类型：
--
作者：
AKIMICHI, H;WARAGAI, K;SAKAKI, H
用烷基取代的低聚硫苯薄膜制备了场效应晶体管。与传统的未取代低聚硫吩类化合物相比，这些化合物导致源漏沟道电流显著增加。沟道电流的增加主要是由于材料的载流子迁移率增强所致。我们报告说，FET很容易通过单一的常规铸造或蒸发过程来制造。
Field-effect transistors (FETs) have been prepared using thin films of alkyl substituted oligothiophenes. These compounds bring about a significant increase in the source-drain channel current when compared to the conventional nonsubstituted oligothiophenes. The increased channel current mostly results from the enhanced carrier mobility of the material. We report that the FETs are readily made by a single routine process of casting or evaporation.