Iron-mediated growth of epitaxial graphene on SiC and diamond
Iron-mediated growth of epitaxial graphene on SiC and diamond
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DOI：
10.1016/j.carbon.2012.06.050
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发表时间：
2012-11-01
期刊：
影响因子：
10.9
通讯作者：
Wells, J. W.
中科院分区：
文献类型：
--
作者：
Cooil, S. P.;Song, F.;Wells, J. W.
利用sp（3）碳向sp（2）碳的催化转化，在Fe处理的SiC和金刚石表面制备了有序石墨烯薄膜。与裸露的SiC（0 0 0 1）表面相比，石墨化温度从超过1000摄氏度降低到600摄氏度，对于金刚石（111），这种新方法首次使外延石墨烯能够在该表面上生长。对于这两种基板，一个关键的发展是使用实时电子光谱法对整个制造过程进行原位监测，为控制厚度的薄膜生产提供必要的精度。石墨烯/石墨层的质量已经使用角分辨光电子能谱、扫描隧道显微镜和低能电子衍射进行了验证。石墨烯仅在表面处理区域形成，因此这提供了一种在工业上现实的温度下在固态SiC和金刚石上制造和图案化石墨烯结构的方法。(c)2012爱思唯尔有限公司保留所有权利。
Ordered graphene films have been fabricated on Fe-treated SiC and diamond surfaces using the catalytic conversion of sp(3) to sp(2) carbon. In comparison with the bare SiC(0 0 0 1) surface, the graphitization temperature is reduced from over 1000 degrees C to 600 degrees C and for diamond (111), this new approach enables epitaxial graphene to be grown on this surface for the first time. For both substrates, a key development is the in situ monitoring of the entire fabrication process using real-time electron spectroscopy that provides the necessary precision for the production of films of controlled thickness. The quality of the graphene/graphite layers has been verified using angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and low energy electron diffraction. Graphene is only formed on treated regions of the surface and so this offers a method for fabricating and patterning graphene structures on SiC and diamond in the solid-state at industrially realistic temperatures. (c) 2012 Elsevier Ltd. All rights reserved.