Magnetic properties of a single molecular layer of MnAs on GaAs(110)
Magnetic properties of a single molecular layer of MnAs on GaAs(110)
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DOI：
10.1103/physrevb.87.075428
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发表时间：
2013-02
影响因子：
3.7
通讯作者：
Motoi Hirayama;A. Natori;J. Nakamura
中科院分区：
文献类型：
--
作者：
Motoi Hirayama;A. Natori;J. Nakamura
采用基于自旋密度泛函理论的第一性原理方法研究了GaAs（110）表面单分子层的电子和磁性。在GaAs（110）上的MnAs层中证实了各向异性的自旋相互作用：沿沿着方向为铁磁取向，而沿沿着方向为几乎消失的小相互作用。外生电荷对MnAs层中磁相互作用的影响也进行了探讨。GaAs（110）表面上的MnAs层在空穴注入时表现出较小的各向异性磁相互作用，呈现出由GaAs（110）表面态介导的二维铁磁性。如果MnAs（110）单层嵌入体GaAs基质中，空穴的注入抑制了面内铁磁性。
Electronic and magnetic properties of a single molecular layer on the GaAs(110) surface have been investigated using first-principles calculations based on the spin-density-functional theory. An anisotropic spin interaction has been confirmed in the MnAs layer on GaAs(110): a ferromagnetic alignment along thedirection, while a vanishingly small interaction along thedirection. Effects of extrinsic charges on the magnetic interaction in the MnAs layer have also been explored. The MnAs layer on the GaAs(110) surface exhibits less anisotropic magnetic interaction as holes are injected, taking on the two-dimensional ferromagnetism mediated by the surface states of GaAs(110). If the MnAs(110) single layer is embedded in the bulk GaAs matrix, the injection of holes suppresses the in-plane ferromagnetism.