Composition dependent properties of p- and n-type polycrystalline group-IV alloy thin films
Composition dependent properties of p- and n-type polycrystalline group-IV alloy thin films
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p型和n型多晶IV族合金薄膜的成分相关性质
DOI：
10.1016/j.jallcom.2021.161306
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发表时间：
2021-08-04
影响因子：
6.2
通讯作者：
Toko, Kaoru
中科院分区：
文献类型：
--
作者：
Mizoguchi, Takuto;Imajo, Toshifumi;Toko, Kaoru
IV族合金半导体作为下一代电子产品的先进薄膜材料，已获得越来越多的关注。我们已经证明了多晶锗薄膜的最高记录的结晶度和载流子迁移率使用多步加热过程中的固相结晶。在本研究中，我们将Ge中的这些最新发现应用于Si 1-xGex（x：0-1）和Ge 1-ySny（y：0-0.04）合金，并研究它们的晶体和电学性质。对于所有的组合物，在每个阶段中控制温度的晶粒尺寸增加到微米级，提高载流子迁移率和减少缺陷诱导的受体的数量。Sb掺杂除了n型导电控制之外，还进一步扩大晶粒尺寸（高达10 μ m），而电子浓度随组合物而变化。由于载流子有效质量、晶粒尺寸和载流子浓度的影响，空穴和电子迁移率都显著依赖于组成：空穴和电子迁移率分别在350和150 cm（2）V（-1）s（-1）处达到峰值。在这项研究中揭示的组合物和各种物理性能之间的关系将有助于更好地理解，控制，和基于第IV族合金半导体的多晶薄膜的器件应用。(C)2021爱思唯尔有限公司版权所有。
Group-IV alloy semiconductors have garnered increasing attention as advanced thin-film materials for next-generation electronics. We have demonstrated polycrystalline Ge thin films with the highest recorded crystallinity and carrier mobility using a multistep heating process in solid-phase crystallization. In this study, we apply these recent findings in Ge to Si1-xGex (x: 0-1) and Ge1-ySny (y: 0-0.04) alloys and investigate their crystal and electrical properties. For all compositions, controlling the temperature in each stage increases the grain size to the micrometer order, improving the carrier mobility and reducing the number of defect-induced acceptors. Sb doping further enlarges the grain size (up to 10 mu m) in addition to n-type conduction control, whereas the electron concentration varies with the composition. Both hole and electron mobilities significantly depend on the composition owing to the effects of carrier effective mass, grain size, and carrier concentration: the hole and electron mobilities peak at 350 and 150 cm(2) V(-1)s(-1), respectively. The relationship between the composition and various physical properties revealed in this study will contribute to the better understanding, control, and device application of polycrystalline thin films based on group-IV alloy semiconductors. (C) 2021 Elsevier B.V. All rights reserved.