Structural and electrical characterizations of the pulsed-laser-deposition-grown Sc2O3∕GaN heterostructure
Structural and electrical characterizations of the pulsed-laser-deposition-grown Sc2O3∕GaN heterostructure
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脉冲激光沉积生长的 Sc2O3∕GaN 异质结构的结构和电学特征
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
Y. Dong
中科院分区：
文献类型：
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作者：
Chang Liu;E. Chor;L. Tan;Y. Dong
采用脉冲激光沉积技术在GaN/蓝宝石模板上生长了单晶Sc2O3，并研究了其界面特性。用X射线衍射仪和电子显微镜研究了[112Sc_2O_3]‖[2130]GaN和(222)Sc_2O_3‖(0002)GaN的外延关系。X射线光电子能谱测得其价带偏移量为0.84 eV，表明Sc2O3/GaN异质界面的导带偏移量为2.04 eV。此外，由电容-电压测量得到的低界面态密度为4×1011 eV−1 cm−2。Sc_2O_3/GaN金属-氧化物-半导体结构具有良好的外延特性和良好的界面特性，在30V的反向栅压下，漏电流为1μA/cm~2。
Single-crystalline Sc2O3 was grown on GaN/sapphire template using pulsed laser deposition and the interface characteristics of the Sc2O3∕GaN heterostructure were investigated. An epitaxial relationship of [112]Sc2O3‖[213¯0]GaN and (222)Sc2O3‖(0002)GaN was revealed by x-ray diffraction and cross-sectional transmission electron microscopy. A valence band offset of 0.84eV was obtained by x-ray photoelectron spectroscopy, indicating a conduction band offset of 2.04eV across the Sc2O3∕GaN heterointerface. In addition, a low interface state density of 4×1011eV−1cm−2 was estimated from capacitance-voltage measurements. The epitaxial nature with good interface characteristics has rendered a substantially low leakage current of 1μA∕cm2 at a reverse gate bias of 30V in the Sc2O3∕GaN metal-oxide-semiconductor structures.