High-Temperature-Triggered Thermally Degradable Electronics Based on Flexible Silicon Nanomembranes
High-Temperature-Triggered Thermally Degradable Electronics Based on Flexible Silicon Nanomembranes
复制标题
基于柔性硅纳米膜的高温触发热降解电子器件
DOI：
10.1002/adfm.201801448
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发表时间：
2018-11-07
影响因子：
19
通讯作者：
Mei, Yongfeng
中科院分区：
文献类型：
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作者：
Li, Gongjin;Song, Enming;Mei, Yongfeng
先进的瞬态方法可以使设备级电子系统在临时平台上突然降级并随后消失，在长期稳定运行所需的时间内保留有限。为了满足瞬态电子器件中能够在高温下工作的柔性器件的要求，提出了与高温可降解聚α-甲基苯乙烯（PAMS）集成的瞬态硅纳米膜（Si-NM）电子器件。系统实验研究表明，Si-NM器件中4μm厚的PAMS中间层可确保在PAMS分解温度（约300℃）以下稳定运行，而在更高温度下触发时器件会经历瞬态过程。实验表征和理论建模揭示了柔性器件的基本特性及其失效机制。高温电子器件中这种瞬态元件的演示凸显了电路保护、信息安全和传感/控制系统需求中的潜在优势。
An advanced transient approach enables the sudden degradation and subsequent disappearance of device-grade electronic systems on a temporary platform with limited remains over a desired period for long-term stable operation. To satisfy the requirements for flexible devices in transient electronics capable of working at high temperature, transient Si-nanomembrane (Si-NM) electronics integrated with high-temperature degradable poly-alpha-methylstyrene (PAMS) are presented. Systematic experimental studies suggest that a 4 mu m thick PAMS interlayer in the Si-NM device ensures stable operation below the decomposition temperature of PAMS (approximate to 300 degrees C), while the device undergoes transient process when triggered at higher temperature. Experimental characterization and theoretical modeling reveal the essential properties of the flexible device and its failure mechanism. Demonstrations of such a transient component in high-temperature electronics highlight the potential advantages in the demands for circuit safeguards, information security, and sensing/control systems.