Edinburgh Research Explorer The dependence of the Schottky barrier height on carbon nanotube diameter for Pd-carbon nanotube contacts
Edinburgh Research Explorer The dependence of the Schottky barrier height on carbon nanotube diameter for Pd-carbon nanotube contacts
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爱丁堡研究探索者 Pd-碳纳米管接触的肖特基势垒高度对碳纳米管直径的依赖性
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通讯作者：
E. Campbell
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作者：
J. Svensson;Abdelrahim A. Sourab;Y. Tarakanov;D. S. Lee;S. Park;Seung Jae Baek;Y. Park;E. Campbell
提出了与钯电极接触的碳纳米管器件的肖特基势垒高度的直接测量方法。SB势垒高度由器件关闭状态下温度相关热离子发射电流的活化能确定。势垒高度一般随纳米管直径的增加而降低，与假设费米能级钉钉影响很小或没有影响时的预期值一致。
Direct measurements are presented of the Schottky barrier (SB) heights of carbon nanotube devices contacted with Pd electrodes. The SB barrier heights were determined from the activation energy of the temperature-dependent thermionic emission current in the off-state of the devices. The barrier heights generally decrease with increasing diameter of the nanotubes and they are in agreement with the values expected when assuming little or no influence of Fermi level pinning.