Development of Y3+ and Mg2+-doped zirconia thick film humidity sensors
Development of Y3+ and Mg2+-doped zirconia thick film humidity sensors
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DOI：
10.1016/j.matchemphys.2010.12.034
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发表时间：
2011-03
影响因子：
4.6
通讯作者：
Meiying Su;Jing Wang;Yuwen Hao
中科院分区：
文献类型：
--
作者：
Meiying Su;Jing Wang;Yuwen Hao
Research highlights:→ Y3+ doped and Mg2+ doped zirconia thick film humidity sensors were developed.→ The sensors exhibited high sensitivity, good linearity and small hysteresis.→ Rapid response-recovery behavior and less effect of temperature were also exhibited.→ The influence of dopant on the sensors was discussed by XRD, XPS and defect structure.→ The humidity sensing mechanism is investigated.-Abstract: Y3+-doped and Mg2+-doped zirconia thick film humidity sensors were investigated. The humidity sensors exhibited good sensing characteristics. The sensor got a high sensitivity with the impedance changed five orders of magnitude from 108 to 103 Ω in the relative humidity (RH) range of 11-98% at 20 deg. C. The response time is about 30 s for Y3+ doped sensor, and 5 s for Mg2+ doped one, and recovery time is 5 s for both sensors. Small humidity hysteresis is about 3% RH and 4% RH for Y3+ and Mg2+ doped ZrO2 sensors, respectively. Moreover, good repeatability, linearity and temperature properties of the both sensors were also exhibited. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and defect structure were used to analyze the influence of dopant on humidity sensitive properties. And the mechanism of humidity sensing properties was also discussed.
