Fabrication of piezoresistive-sensed AFM cantilever probe with integrated tip
Fabrication of piezoresistive-sensed AFM cantilever probe with integrated tip
复制标题
具有集成尖端的压阻传感 AFM 悬臂梁探针的制造
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
P. Dumania
中科院分区：
文献类型：
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作者：
I. Rangelow;F. Shi;P. Hudek;T. Gotszalk;P. Grabiec;P. Dumania
Quate开发的第一个压阻式AFM传感器基于SOI技术。本文介绍了一种用于原子力显微镜的硅悬臂梁集成微探针的制备技术。它是基于体微加工来确定悬臂梁的厚度，表面微加工来开发尖锐的尖端和标准的IC平面加工。利用等离子体处理的光致抗蚀剂和硬掩模步骤的特定顺序，然后进行湿各向同性、湿各向异性和干蚀刻，以获得非常尖锐的硅尖端。首先，使用基于HF/HNO 3的抛光蚀刻剂在所形成的悬臂的端部处形成梅萨岛。接下来，实现了一个平面IC工艺序列，以制造压阻式惠斯通电桥，这将作为力传感元件。采用电化学腐蚀停止技术精确控制了梁的厚度。然后，使用底切方法通过RIE和/或湿法蚀刻形成尖锐尖端。最后，采用深各向异性硅刻蚀结合SF6/Ar等离子体刻蚀的方法制备了硅悬臂梁。
First piezoresistive AFM sensor developed by Quate was based on SOI technology. Alternative technology for fabrication of microtips integrated with silicon cantilever beam, used as a microprobe in atomic force microscopy, is described in this paper. It is based on a bulk micromachining to define the cantilever thickness, surface micromachining to develop sharp tip and standard IC planar processing. Specific sequence of plasma treated photoresist and hard masking steps followed by wet isotropic, wet anisotropic and dry etching is utilized to obtain very sharp silicon tips. First, HF/HNO3 based polishing etchant is used to create mesa islands at the end of the formed cantilever. Next, a planar IC processing sequence is realized to fabricate piezoresistive Wheatstone bridge which will serve as a force sensing element. Thickness of the beam is precisely controlled by electrochemical etch-stop technique in. Then, sharp tip is formed by both RIE and/or wet etching, using under-cutting method. Finally, deep anisotropic silicon etching combined with SF6/Ar plasma etching is used to create cantilever silicon beam.