Epitaxial growth, structure, and intermixing at the LaAlO3/SrTiO3 interface as the film stoichiometry is varied
Epitaxial growth, structure, and intermixing at the LaAlO3/SrTiO3 interface as the film stoichiometry is varied
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DOI:
10.1103/physrevb.83.085408
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发表时间:
2011-02-11
影响因子:
3.7
通讯作者:
Chambers, S. A.
中科院分区:
文献类型:
--
作者:
Qiao, L.;Droubay, T. C.;Chambers, S. A.
LaAlO3 epitaxial films with La:Al cation ratios ranging from 0.9 to 1.2 were grown on TiO2-terminated SrTiO3 (001) substrates by off-axis pulsed laser deposition. Although all films are epitaxial, rocking curve measurements show that the crystallographic quality degrades with increasing La: Al ratio. Films with La: Al ratios of 0.9, 1.0, and 1.1 were coherently strained to the substrate. However, the out-of-plane lattice parameter increases over this range, revealing a decrease in film tetragonality. Although all film surfaces exhibit hydroxylation, the extent of hydroxylation is greater for the La-rich films. Rutherford backscattering spectrometry reveals that La from the film diffuses deeply into the SrTiO3 substrate and secondary-ion-mass spectroscopy shows unambiguous Sr outdiffusion into the films.