Alloying In2O3 and Ga2O3 on AlN templates for deep-ultraviolet transparent conductive films by mist chemical vapor deposition
Alloying In2O3 and Ga2O3 on AlN templates for deep-ultraviolet transparent conductive films by mist chemical vapor deposition
复制标题
AlN模板上合金化In2O3和Ga2O3雾气化学气相沉积制备深紫外透明导电薄膜
DOI：
10.35848/1347-4065/ac4688
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发表时间：
2022
影响因子：
1.5
通讯作者：
Yoshimoto Masahiro
中科院分区：
文献类型：
--
作者：
Ogura Yuri;Arata Yuta;Nishinaka Hiroyuki;Yoshimoto Masahiro
