Charge gap and dimensional crossovers in quasi-one-dimensional organic conductors
Charge gap and dimensional crossovers in quasi-one-dimensional organic conductors
复制标题
准一维有机导体中的电荷间隙和维度交叉
DOI：
10.1016/s0022-3697(00)00108-6
复制
发表时间：
2001
影响因子：
4
通讯作者：
J. Kishine
中科院分区：
文献类型：
--
作者：
K. Yonemitsu;J. Kishine
准一维四分之一填充的有机导体，（TMTTF）2X和（TMTSF）2X，显示出维度交叉，并且它们的电子性质相应地改变。我们描述了这使用两个循环微扰和密度矩阵重整化群方法，在一维周围的ESTA展开，和随机相位近似。阐明了二聚化对电荷间隙和链间单粒子相干性的影响。还研究了随机电位的影响，以描述（DCNQI）2 Ag 1-xCux混晶的Mott绝缘体、安德森局域化和金属相。
Quasi-one-dimensional quarter-filled organic conductors, (TMTTF)2X and (TMTSF)2X, show a dimensional crossover, and their electronic properties change accordingly. We describe this using the two-loop perturbative and density-matrix renormalization-group methods, the ϵ expansion around one dimension, and the random phase approximation. The effect of dimerization on the charge gap and interchain one-particle coherence is clarified. The effect of random potentials is also studied to describe the Mott insulator, Anderson localization, and metallic phases of (DCNQI)2Ag1−xCuxmixed crystals.