A S/C-band high Q resonator architecture for direct print additive manufacturing
A S/C-band high Q resonator architecture for direct print additive manufacturing
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用于直接打印增材制造的 S/C 波段高 Q 谐振器架构
DOI：
10.1109/wamicon.2017.7930239
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
Thomas E. Waller
中科院分区：
文献类型：
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作者：
D. Hawatmeh;Thomas E. Waller
在本文中，提出了第一个高Q容性加载空腔谐振器，其与直接打印增材制造（熔融沉积成型和微点胶的组合）兼容。谐振器工作在2.3-7 GHz，通过改变腔体中心的电容间隙的厚度。在相同频率范围内测得的Q因子在107和140之间。使用熔融沉积成型来沉积丙烯腈丁二烯苯乙烯（ABS）以形成谐振器结构（相对介电常数为2.7，损耗角正切为0.008），并且使用Dupont CB 028银膏来形成导电区域。
In this paper, the first high-Q capacitively-loaded cavity resonator that is compatible with direct print additive manufacturing (the combination of fused deposition modeling and micro-dispensing) is presented. The resonator operates from 2.3–7 GHz by changing the thickness of a capacitive gap in the center of the cavity. The measured Q-factor over the same frequency range is between 107 and 140. Acrylonitrile Butadiene Styrene (ABS) is deposited using fused deposition modeling to form the resonator structure (relative permittivity of 2.7 and loss tangent of 0.008) and Dupont CB028 silver paste is used to form the conductive regions.