Ferroelectric and piezoelectric properties of epitaxial PZT films and devices on silicon

Ferroelectric and piezoelectric properties of epitaxial PZT films and devices on silicon
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硅外延 PZT 薄膜和器件的铁电和压电特性

DOI：
10.3990/1.9789036530477
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
M. Nguyen
M. Nguyen
中科院分区：
--
文献类型：
--
作者：
M. Nguyen

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本论文研究了锆钛酸铅(PZT)薄膜与压电材料的集成 研究了硅基微电子机械系统(MEMS)。在这些结构中，所有外延 采用脉冲激光沉积技术沉积了氧化层(薄膜/电极/缓冲层(S))。 首先，对硅基PZT薄膜的取向控制进行了研究。我们发现，通过使用种子层 (~4A)缺Ru的SrO底电极与CeO2/YSZ缓冲液之间的SrnRun-1O3n-2 在(001)Si衬底上，PZT薄膜的取向可以从(110)向(001)转变。 当导电氧化物SRO电极取代铂时，氧的积累 界面附近的空位被阻止，因此观察到无疲劳行为 PZT/SRO电容器最高可达108个开关周期。 研究了薄膜厚度对PZT(52/48)薄膜微结构和电学性能的影响 在这一章中也进行了研究。在所研究的膜厚范围内，微结构和 晶体结构几乎不随厚度变化。残留物的厚度依赖关系 极化和介电常数是用界面层来解释的 膜/电极界面。剩余极化和介电常数的增加是由于 随着薄膜厚度的增加，PZT薄膜的界面效应减小。此外，减少 界面效应的减弱也导致了矫顽场的降低。 研究了铁电PZT薄膜在硅悬臂梁上的集成。主 本章的重点是用于优化制造的压电悬臂梁的发展。 过程以及对潜在应用的理解。作为结果，使用PLD 微细加工技术与MEMS微细加工--压电梁式PZT悬臂梁阵列 设计的长度从100到800μm，宽度从50到150μm，以及 捏造的。
In this thesis, the integration of lead zirconate titanate Pb(Zr,Ti)O3 (PZT) thin films into piezoelectric microelectromechanical systems (MEMS) based on silicon is studied. In these structures, all epitaxial oxide layers (thin film/electrode/buffer-layer(s)) were deposited by pulsed laser deposition (PLD). First, the orientation control of PZT thin films on silicon has been studied. We found that by using a seedlayer (~4 A) of Ru-deficient SrnRun-1O3n-2 between SRO bottom-electrode and CeO2/YSZ buffered (001)Si substrates, the orientation of PZT thin films can be switched from (110) to (001). When the conductive-oxide SRO electrodes were substituted for Pt, the accumulation of oxygen vacancies near the interface was prevented, and therefore the fatigue-free behavior was observed in the PZT/SRO capacitors up to 108 switching cycles. The effects film thickness on the microstructure and electrical properties of PZT(52/48) films have been also investigated in this chapter. In the film thickness range investigated, the microstructure and crystalline structure almost do not change with thickness. The thickness dependence of the remnant polarization and the dielectric constant is interpreted in terms of the interfacial layer at the film/electrode interface. The increased remnant polarization and dielectric constant is due to the reduction of interfacial effect in PZT films with an increase in film thickness. Moreover, the reduction of interfacial effect also leads to the decrease in coercive field. The integration of ferroelectric PZT thin films onto Si cantilever beams was investigated. The main focus of this chapter is on the development of piezo-cantilevers for optimization of the fabrication process as well as for understanding of the potential applications. As the results, using the PLD technique and MEMS micro-fabrication processes, piezoelectric PZT cantilever arrays with beam lengths ranging from 100 to 800 μm with widths ranging from 50 to 150 μm were designed and fabricated.