WASA: a low power front-end ASIC for time projection chambers in 65 nm CMOS

WASA: a low power front-end ASIC for time projection chambers in 65 nm CMOS
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WASA:用于 65 nm CMOS 时间投影室的低功耗前端 ASIC

DOI:
10.1088/1748-0221/15/05/p05005
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发表时间:
2020-05-01
影响因子:
1.3
通讯作者:
Qi, H.
Qi, H.
中科院分区:
工程技术4区
文献类型:
--
作者:
Liu, W.;Zhao, X.;Qi, H.

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针对CEPC(Circular Electron Positron Collider)实验中的时间投影室,设计了一种低功耗的前端专用集成电路WASA。功耗变得非常关键,并通过使用65 nm CMOS工艺和具有简单模拟电路的电路结构来解决。设计并制作了三款原型ASIC芯片,包括5通道模拟前端芯片、SAR ADC芯片和模拟前端与ADC的混合信号芯片。本文仅介绍AFE和SAR ADC芯片的设计和测试结果。AFE和SAR ADC内核的功耗分别为每通道2.0 mW和1.0 mW。AFE的增益和ENC噪声为8.91 mV/fC和644个电子@10 pF输入电容,包括用于测试目的的外部缓冲器的460个电子的贡献。在145 fC的动态范围内,INL小于0.5%。两个相邻通道之间的最大串扰为0.39%。在50 MS/s时,ADC的SNDR和SFDR分别为57.2 dB和79.4 dBc,输入信号为2.4 MHz,对应的有效位为{9.2}位。还对AFE和SAR ADC进行了总电离剂量(TID)测试。总剂量高达1 Mrad(Si)时,未观察到显著的性能退化。
A low power front-end ASIC, named WASA has been developed for the time projection chamber for the CEPC (Circular Electron Positron Collider) experiment. Power consumption becomes very critical and is addressed by using 65 nm CMOS process and circuit structure with simple analog circuits. Three prototype ASIC chips have been designed and fabricated, including the 5-channel analog front-end (AFE) chip, the SAR ADC chip and the mixed-signal chip with the AFE and the ADC together. Only the design and the test results of the AFE and the SAR ADC chips are reported in this paper. The power consumptions of the AFE and the SAR ADC core were measured to be 2.0 mW and 1.0 mW per channel respectively. The gain and the ENC noise of the AFE were 8.91 mV/fC and 644 electrons @ 10 pF input capacitance, including the contribution of 460 electrons from the external buffer for test purpose. The INL was less than 0.5% for a dynamic range of 145 fC. The maximum crosstalk between two adjacent channels was 0.39%. The SNDR and SFDR of ADC were measured to be 57.2 dB and 79.4 dBc at 50 MS/s for a 2.4 MHz input sine signal, corresponding to an ENOB of {9.2} bit. The total ionizing dose (TID) tests were also done for the AFE and the SAR ADC. No significant performance degradation {was} observed for the total dose up to 1 Mrad (Si).