Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning
Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning
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DOI：
10.1063/1.4945268
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发表时间：
2016-04-04
影响因子：
4
通讯作者：
Urbaszek, Bernhard
中科院分区：
文献类型：
--
作者：
Branny, Artur;Wang, Gang;Urbaszek, Bernhard
过渡金属二硫属化物单层膜如MoSe 2、MoS 2和WSe 2是具有原始光电和自旋谷特性的直接带隙半导体。在这里，我们报告的光谱尖锐，空间局域化的发射单层MoSe 2。我们发现这种量子点样发射的样品剥离到金基板上，也悬浮薄片。空间映射示出了发射器的位置与薄片中的褶皱（应变区域）的存在之间的相关性。我们调整的发射特性，在磁场和电场垂直于单层平面。我们提取的离散发射器的激子g-因子接近-4，在这种材料中的二维激子。在一个电荷可调的样品中，我们记录离散跳跃的meV规模的电荷被添加到发射极时，改变施加的电压。(C)2016年作者。
Transition metal dichalcogenide monolayers such as MoSe2, MoS2, and WSe2 are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report on spectrally sharp, spatially localized emission in monolayer MoSe2. We find this quantum dot-like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial mapping shows a correlation between the location of emitters and the existence of wrinkles (strained regions) in the flake. We tune the emission properties in magnetic and electric fields applied perpendicular to the monolayer plane. We extract an exciton g-factor of the discrete emitters close to -4, as for 2D excitons in this material. In a charge tunable sample, we record discrete jumps on the meV scale as charges are added to the emitter when changing the applied voltage. (C) 2016 Author(s).