Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates
Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates
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DOI：
10.1364/prj.441122
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发表时间：
2022-01-01
影响因子：
7.6
通讯作者：
Wierer, Jonathan J., Jr.
中科院分区：
文献类型：
--
作者：
Wei, Xiongliang;Al Muyeed, Syed Ahmed;Wierer, Jonathan J., Jr.
研究了在光电化学（PEC）蚀刻的量子点模板上控制生长形成的InGaN量子点的近红外电致发光。该QD模板由高密度、尺寸可控的PEC InGaN量子点、用于保护量子点的AlGaN封盖层和用于使表面平坦化的GaN势垒层组成。扫描透射电子显微镜（STEM）在QD模板上的Stranski-Krastanov （SK）生长显示，由于局部应变，高in含量的InGaN量子点与PEC量子点垂直排列。STEM证实，高al含量的Al0.9Ga0.1N封盖层可以防止在高温GaN生长过程中由于混合或分解而导致SK量子点崩溃。低温（830℃）p型层的生长完成了p-n结，进一步保证了量子点的完整性。最后，由于SK量子点的高高度、高In含量和强极化电场，电致发光表现出明显的波长偏移（从800 nm到500 nm）。(C) 2021中国激光出版社
Near-infrared electroluminescence of InGaN quantum dots (QDs) formed by controlled growth on photoelectrochemical (PEC) etched QD templates is demonstrated. The QD template consists of PEC InGaN QDs with high density and controlled sizes, an AlGaN capping layer to protect the QDs, and a GaN barrier layer to planarize the surface. Scanning transmission electron microscopy (STEM) of Stranski-Krastanov (SK) growth on the QD template shows high-In-content InGaN QDs that align vertically to the PEC QDs due to localized strain. A high-Al-content Al0.9Ga0.1N capping layer prevents the collapse of the SK QDs due to intermixing or decomposition during higher temperature GaN growth as verified by STEM. Growth of low-temperature (830 degrees C) p-type layers is used to complete the p-n junction and further ensure QD integrity. Finally, electroluminescence shows a significant wavelength shift (800 nm to 500 nm), caused by the SK QDs' tall height, high In content, and strong polarization-induced electric fields. (C) 2021 Chinese Laser Press