4H-SiC Trench MOSFET With L-Shaped Gate
4H-SiC Trench MOSFET With L-Shaped Gate
复制标题
具有 L 形栅极的 4H-SiC 沟槽 MOSFET
DOI：
10.1109/led.2016.2533432
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发表时间：
2016-04-01
影响因子：
4.9
通讯作者：
Zhang, Yuming
中科院分区：
文献类型：
--
作者：
Song, Qingwen;Yang, Shuai;Zhang, Yuming
提出了一种新型的L型栅4 H-SiC沟槽金属氧化物半导体场效应晶体管（MOSFET），并对其进行了数值模拟研究。采用围绕沟槽底部角落的附加LSG区域允许通过电荷补偿显著减轻SiO2电介质中的峰值电场，并且可以极大地增强器件击穿电压而不会导致输出特性的显著劣化。在高电压阻断状态下，沟槽底角处的电场被削弱，这导致器件性能的改善。与传统的4 H-SiC沟槽MOSFET相比，SiO2介质中的峰值电场值降低了32.3%，而击穿电压增加了80.4%。
A novel 4H-SiC trench metal-oxide-semiconductor field-effect transistor (MOSFET) with an L-shaped gate (LSG) is proposed and studied via numerical simulations in this letter. Adoption of an additional LSG region that surrounds the bottom corner of the trench allows the peak electric field in the SiO2 dielectric to be significantly relieved by charge compensation, and the device breakdown voltage can be greatly enhanced without causing significant degradation of the output characteristics. In high-voltage blocking states, the electric field at the bottom corner of the trench is weakened, which leads to improved device performance. The peak electric field value in the SiO2 dielectric decreases by 32.3% when compared with that of a conventional 4H-SiC trench MOSFET, while the breakdown voltage increases by 80.4%.