Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 x 106
Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 x 106
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DOI：
10.1364/optica.4.000218
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发表时间：
2017-02-20
期刊：
影响因子：
10.4
通讯作者：
Favero, Ivan
中科院分区：
文献类型：
--
作者：
Guha, Biswarup;Marsault, Felix;Favero, Ivan
砷化镓和相关化合物半导体是光电子学和集成激光技术的核心。在微米和纳米级的形状，它们允许与量子点和量子威尔斯强相互作用，并承诺惊人的光学有源器件。然而，砷化镓光学结构目前表现出比基于硅的无源对应物更低的性能，特别是在纳米光子学中，其中表面起主要作用。在这里，我们报告先进的表面控制的微型砷化镓光学谐振器使用两种不同的技术，产生永久性的结果。一种延长了自由载流子的寿命并增强了发光，而另一种则大大降低了表面吸收并实现了超低光耗散器件。通过这种表面控制，波长大小的光盘谐振器的品质因数在电信波长处被观察到上升到6 × 10（6），大大超过了以前的实现，并为砷化镓纳米光子学开辟了新的前景。(C)2017美国光学学会
Gallium arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro- and nanoscale, they allow strong interaction with quantum dots and quantum wells, and promise stunning optically active devices. However, gallium arsenide optical structures presently exhibit lower performance than their passive counterparts based on silicon, notably in nano-photonics, where the surface plays a chief role. Here, we report on advanced surface control of miniature gallium arsenide optical resonators using two distinct techniques that produce permanent results. One extends the lifetime of free carriers and enhances luminescence, while the other strongly reduces surface absorption and enables ultra-low optical dissipation devices. With such surface control, the quality factor of wavelength-sized optical disk resonators is observed to rise up to 6 x 10(6) at the telecom wavelength, greatly surpassing previous realizations and opening new prospects for gallium arsenide nanophotonics. (C) 2017 Optical Society of America