Ion irradiation enhanced crystal nucleation in amorphous Si thin films
Ion irradiation enhanced crystal nucleation in amorphous Si thin films
复制标题
离子辐照增强非晶硅薄膜中的晶体成核
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
H. Atwater
中科院分区：
文献类型：
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作者：
J. Im;H. Atwater
利用原位透射电子显微镜在T=500-580 °C温度范围内研究了Si薄膜在1.5MeV ~（3+）辐照下非晶-晶转变的成核动力学。在可忽略的成核发生的孵育期之后，在稳定状态下观察到恒定的成核速率，这表明发生了均质成核。与热结晶相比，在高能离子辐照期间观察到成核速率的显著增强（5至7个数量级），表观活化能为3.9±0.75 eV。
The nucleation kinetics of the amorphous‐to‐crystal transition of Si films under 1.5 MeV Xe+ irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500–580 °C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high‐energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV.