3-D Simulation Study on Deep Dielectric Charging Characteristics of Satellite Slip Ring Assembly
3-D Simulation Study on Deep Dielectric Charging Characteristics of Satellite Slip Ring Assembly
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DOI：
10.1109/tps.2023.3323752
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发表时间：
2023-11
影响因子：
1.5
通讯作者：
Dejie Wei;Liying Zhu;Jianwen Wu;Ziang Tong;Shangwen Xia;Jingyi Lin
中科院分区：
文献类型：
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作者：
Dejie Wei;Liying Zhu;Jianwen Wu;Ziang Tong;Shangwen Xia;Jingyi Lin
地球同步轨道（GEO）卫星的深层充放电效应是导致卫星失效或异常运行的重要原因。针对卫星复杂结构介质深层充电问题，基于电荷守恒定律和电导率-温度模型，建立了太阳能电池阵驱动组件（SADA）滑环深层充电的三维时域仿真模型。该模型采用蒙特卡罗粒子输运模拟和有限元计算相结合。它考虑了介质电导率、温度和屏蔽厚度的影响。模拟结果表明，在GEO最恶劣的能谱辐射环境下，SADA滑环中介质深层充电最严重的部位是金属导体上边缘与绝缘介质的交界处。随着屏蔽厚度的增加，介质深层充电效应减弱，但随着温度的降低，屏蔽效应显著降低。当温度为253 K时，辐射诱导电导率起主导作用;即使屏蔽厚度为3.5 mm，最大电场强度仍接近击穿阈值2.5 × 10^{7}$ V/m，使其易于发生内部放电。所得结论可为卫星复杂结构的深部充能研究和屏蔽设计提供有价值的理论指导。
Deep dielectric charging and discharging effects significantly contribute to the failure or abnormal operation of geosynchronous orbit (GEO) satellites. In this article, aiming at the deep dielectric charging problem of satellite complex structures, based on the charge conservation law and the conductivity–temperature model, a 3-D simulation time-domain model is developed to investigate the deep charging of the solar array drive assembly (SADA) slip ring. The model utilizes a combination of Monte Carlo particle transport simulation and finite-element calculation. It takes into account the influence of medium conductivity, temperature, and shielding thickness. The simulation results demonstrate that under the worst energy spectrum radiation environment of GEO, the most serious part of deep dielectric charging in the SADA slip ring is the junction of the upper edge of the metal conductor and the insulating medium. With the increase in shielding thickness, the deep dielectric charging effect is weakened, but with the decrease in temperature, the shielding effect is significantly reduced. When the temperature is 253 K, the radiation-induced conductivity plays a dominant role; even with a shielding thickness of 3.5 mm, the maximum electric field intensity remains close to the breakdown threshold of $2\times 10^{7}$ V/m, making it susceptible to internal discharge. The conclusions can provide valuable theoretical guidance for deep charging research and shielding design of satellite complex structures.