Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces
Impact of chemically grown silicon oxide interlayers on the hydrogen distribution at hydrogenated amorphous silicon/crystalline silicon heterointerfaces
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DOI：
10.1016/j.apsusc.2021.150799
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发表时间：
2021-11
影响因子：
6.7
通讯作者：
K. Gotoh;M. Wilde;S. Ogura;Y. Kurokawa;K. Fukutani;N. Usami
中科院分区：
文献类型：
--
作者：
K. Gotoh;M. Wilde;S. Ogura;Y. Kurokawa;K. Fukutani;N. Usami
研究了氧化预处理（OPT）和沉积后退火（PDA）对硅异质结太阳能电池中关键功能区--晶硅（c-Si）/氢化非晶硅（a-Si：H）界面附近氢分布和钝化性能的影响。在沉积a-Si：H层之前的OPT包括将c-Si衬底浸入过氧化氢溶液中，这形成氧化硅夹层。椭圆偏振光谱（SE）表明，略厚的a-Si：H层的结果从OPT. The折射率和消光系数的增加，通过插入氧化物夹层，这表明较少的缺陷和致密的a-Si：H层可以形成。在最佳条件下，OPT导致至少2倍的有效光生载流子寿命的改善。PDA在200 °C下进一步改善了具有中间层的样品的钝化性能。氢谱与核反应分析澄清，较高的氢浓度存在于周围的异质界面的样品与夹层，这些氢浓度后PDA保持。我们的研究结果表明，氧化物中间层可以抑制氢解吸在高质量的a-Si：H层的初始生长阶段，并在随后的PDA，从而导致优异的钝化性能。
We studied the impact of oxidizing pre-treatments (OPT) and post deposition annealing (PDA) on the passivation performance and the hydrogen distribution near the interface between crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H), the critical functional region in Si heterojunction solar cells. The OPT prior to deposition of the a-Si:H layer consists of immersing the c-Si substrates into hydrogen peroxide solutions, which forms a silicon oxide interlayer. Spectroscopic ellipsometry (SE) indicates that slightly thicker a-Si:H layers result from OPT. The refractive index and the extinction coefficient are increased by inserting the oxide interlayers, suggesting that less deficient and denser a-Si:H layers can be formed. Under optimum conditions, OPT leads to at least 2-fold improvement of the effective photo-generated carrier lifetime. PDA at 200 °C further improves the passivation performance of samples with an interlayer. Hydrogen profiling with nuclear reaction analysis clarifies that higher hydrogen concentrations are present around the heterointerfaces of samples with an interlayer and that these hydrogen concentrations are maintained after PDA. Our results suggest that the oxide interlayer can suppress hydrogen desorption in the initial growth stage of high-quality a-Si:H layers and during subsequent PDA, resulting in excellent passivation performance.