Lateral SbTeN based multi-layer phase change memory for multi-state storage
Lateral SbTeN based multi-layer phase change memory for multi-state storage
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DOI：
10.1016/j.mee.2007.03.004
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发表时间：
2007-12
影响因子：
2.3
通讯作者：
Y. Yin;H. Sone;S. Hosaka
中科院分区：
文献类型：
--
作者：
Y. Yin;H. Sone;S. Hosaka
