High temperature coefficient of resistance of low-temperature-grown VO2 films on TiO2-buffered SiO2/Si (100) substrates
High temperature coefficient of resistance of low-temperature-grown VO2 films on TiO2-buffered SiO2/Si (100) substrates
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DOI：
10.1063/1.4927746
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发表时间：
2015-08
影响因子：
3.2
通讯作者：
K. Miyazaki;K. Shibuya;Megumi Suzuki;H. Wado;A. Sawa
中科院分区：
文献类型：
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作者：
K. Miyazaki;K. Shibuya;Megumi Suzuki;H. Wado;A. Sawa
TiO 2缓冲层的引入显着提高了电阻的温度系数（TCR），金属-绝缘体转变的锐度的措施，在SiO2/Si（100）衬底上生长的VO 2薄膜在低于670 K的生长温度。X射线衍射和拉曼散射测量表明，多晶VO 2薄膜形成在低于600 K的低温下的TiO 2缓冲衬底上，而非晶薄膜形成在这些温度下的SiO2/Si（100）衬底上没有TiO 2缓冲层。电子显微镜的研究证实，TiO 2缓冲层增强了晶粒生长的VO 2薄膜在低生长温度。在600 K下在TiO 2缓冲衬底上生长的VO 2薄膜显示出大于80%/K的大TCR，这是由于VO 2薄膜的结晶度和晶粒尺寸得到改善。我们的研究结果提供了一种有效的方法，对集成的VO 2基器件到硅平台上的工艺温度低于670 K。
The introduction of a TiO2 buffer layer significantly improved the temperature coefficient of resistance (TCR), a measure of the sharpness of the metal–insulator transition, for films of VO2 grown on SiO2/Si (100) substrates at growth temperatures below 670 K. X-ray diffraction and Raman scattering measurements revealed that polycrystalline VO2 films were formed on the TiO2-buffered substrates at low temperatures below 600 K, whereas amorphous films were formed at these temperatures on SiO2/Si (100) substrates without a TiO2 buffer layer. Electron microscopy studies confirmed that the TiO2 buffer layer enhanced the grain growth of VO2 films at low growth temperatures. The VO2 films grown at 600 K on TiO2-buffered substrates showed a large TCR of more than 80%/K as a result of the improved crystallinity and grain size of the VO2 films. Our results provide an effective approach toward the integration of VO2-based devices onto Si platforms at process temperatures below 670 K.