An Insight Into the ESD Behavior of the Nanometer-Scale Drain-Extended NMOS Device—Part I: Turn-On Behavior of the Parasitic Bipolar
An Insight Into the ESD Behavior of the Nanometer-Scale Drain-Extended NMOS Device—Part I: Turn-On Behavior of the Parasitic Bipolar
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DOI：
10.1109/ted.2010.2093010
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发表时间：
2011-01
影响因子：
3.1
通讯作者：
A. Chatterjee;M. Shrivastava;H. Gossner;S. Pendharkar;F. Brewer;C. Duvvury
中科院分区：
文献类型：
--
作者：
A. Chatterjee;M. Shrivastava;H. Gossner;S. Pendharkar;F. Brewer;C. Duvvury
漏极扩展n型金属氧化物半导体（DENMOS）中的二次击穿现象（It2）与寄生双极晶体管的复杂触发有关。完全理解这个问题需要三维建模；然而，对二维横截面上发生的现象的认识甚至不足。我们提出了实验和模型来理解双极导通的物理性质及其对DENMOS器件中空间电荷调制开始的影响。我们提出了在双极导通过程中涉及的电流路径的详细分析。我们表明，由于p体较深区域的寄生双极导通和漏极接点的雪崩注入的耦合，可以触发强回跳。此外，我们表明，在大电流条件下，由于电子的电流拥挤而在漏极区形成的镇流器电阻可以通过简化的n+/n-电阻结构的一维分析来建模。
A second-breakdown phenomenon (It2) in a drain-extended n-type metal-oxide-semiconductor (DENMOS) is associated with complex triggering of a parasitic bipolar transistor. Full comprehension of the problem requires 3-D modeling; however, there is even deficiency in the understanding of the phenomenon occurring in the 2-D cross-sectional plane. We present experiments and models to understand the physics of bipolar turn-on and its impact on the onset of space-charge modulation in a DENMOS device. We present a detailed analysis of the current paths involved during the bipolar turn-on. We show that a strong snapback is triggered due to coupling of the parasitic bipolar turn-on in a deeper region of the p-body and avalanche injection at the drain junction. Furthermore, we show that the ballast resistor formed in the drain region due to current crowding of electrons under high-current conditions can be modeled through a simplified 1-D analysis of the n+/n- resistive structure.