Detection of characteristic signals from As-doped (less than 1 at.%) regions of silicon by transmission electron microscopy and convergent-beam electron diffraction
Detection of characteristic signals from As-doped (less than 1 at.%) regions of silicon by transmission electron microscopy and convergent-beam electron diffraction
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检测%20of%20特征%20信号%20来自%20As掺杂%20(少于%20比%201%20at.%)%20区域%20of%20硅%20by%20透射%20电子%20显微镜%20和%20会聚束%20电子%20衍射
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
M.Terauchi
中科院分区：
文献类型：
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作者：
M.Terauchi;津田健治;M.Terauchi;M.Terauchi
