InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell
InAs/GaNAs strain-compensated quantum dots stacked up to 50 layers for use in high-efficiency solar cell
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DOI：
10.1016/j.physe.2009.12.036
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发表时间：
2010-09
影响因子：
3.3
通讯作者：
R. Oshima;A. Takata;Y. Shoji;K. Akahane;Y. Okada
中科院分区：
文献类型：
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作者：
R. Oshima;A. Takata;Y. Shoji;K. Akahane;Y. Okada
