Photoconductivity of solution-processed MoS2 films
Photoconductivity of solution-processed MoS2 films
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DOI：
10.1039/c3tc31402b
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发表时间：
2013-01-01
影响因子：
6.4
通讯作者：
Coleman, Jonathan N.
中科院分区：
文献类型：
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作者：
Cunningham, Graeme;Khan, Umar;Coleman, Jonathan N.
溶液剥离的二硫化钼纳米片通过沉积在水面上形成薄膜，然后转移到氧化铟锡涂层玻璃上。干燥后，在顶部蒸发一个金电极，形成一个具有准欧姆接触的三明治结构。用类似于1 kW m（-2）强度的宽带光照射该器件，电导率提高了四倍。光电流随强度呈亚线性增长，随时间呈指数增长，表明存在陷阱。低强度下的光响应在15 V下为10(-4)A / W。这项工作证明了液体剥离的无机纳米片被制造成低成本光电器件的潜力。
Solution-exfoliated MoS2 nano-platelets were formed into thin films by deposition onto a water surface followed by transfer to indium tin oxide coated glass. After drying, a gold electrode was evaporated on top to give a sandwich structure with quasi-Ohmic contacts. Illumination of this device with broadband light of similar to 1 kW m(-2) intensity gave a fourfold increase in conductivity. The photocurrent increased sub-linearly with intensity and exponentially with time indicating the presence of traps. The photo-responsively at low intensity was similar to 10(-4) A per W at 15 V. This work demonstrates the potential for liquid-exfoliated, inorganic nanosheets to be fabricated into low-cost optoelectronic devices.