NANOMETER-SCALE IMAGING OF POTENTIAL PROFILES IN OPTICALLY-EXCITED N-I-P-I HETEROSTRUCTURE USING KELVIN PROBE FORCE MICROSCOPY
NANOMETER-SCALE IMAGING OF POTENTIAL PROFILES IN OPTICALLY-EXCITED N-I-P-I HETEROSTRUCTURE USING KELVIN PROBE FORCE MICROSCOPY
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DOI：
10.1063/1.114867
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发表时间：
1995-11-20
影响因子：
4
通讯作者：
KANBE, H
中科院分区：
文献类型：
--
作者：
CHAVEZPIRSON, A;VATEL, O;KANBE, H
本文报道了用扫描开尔文探测力显微镜(KFM)测量了GaAsAlCaAsn-i-p-i多量子阱结构的势能分布。利用这一新技术，我们以MEV精度和低于100 nm的空间分辨率直接测量了有和没有外部光激发的n-i-p-i层之间的电势差，所测得的电势分布与以前没有直接成像的n-i-p-i结构的电势分布符合得很好，但受到表面能带弯曲效应的修正。(C)1995年美国物理研究所。
We report on measurements of the potential profile of a GaAs/AlCaAs n-i-p-i multiple quantum well structure using a scanning Kelvin probe force microscope (KFM). Using this novel technique we directly measure with meV precision and sub-100 nm spatial resolution the potential difference between n-i-p-i layers with and without external optical excitation, The measured potential profiles, which have not been directly imaged previously, agree well with potential profiles calculated for optically excited n-i-p-i structures, but modified by band bending effects at the surface. (C) 1995 American Institute of Physics.