Generation and collection of photocarriers in dilute nitride GaInNAsSb solar cells
Generation and collection of photocarriers in dilute nitride GaInNAsSb solar cells
复制标题
稀氮化物 GaInNAsSb 太阳能电池中光载流子的产生和收集
DOI:
10.1002/pip.2641
复制
发表时间:
2016
期刊:
影响因子:
--
通讯作者:
Y. Okada
中科院分区:
文献类型:
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作者:
N. Miyashita;N. Ahsan;Y. Okada
An improved photocurrent production is demonstrated in dilute nitride GaInNAsSb solar cells grown by molecular beam epitaxy. The photovoltaic properties were investigated by increasing the thickness of GaInNAsSb layers from 1.0 to 3.0 µm. The amount of photon absorption increased with increasing thickness. Yet an incomplete photocarrier collection was observed in the 2.0‐ and 3.0‐µm‐thick GaInNAsSb devices. This feature is due to a partial lack of electric field in the GaInNAsSb region. In order for complete carrier collection aided by the electric field, the background‐doping level should be as low as ~1014 cm−3 in a thick undoped‐GaInNAsSb absorption layer. Here, the effectiveness of annealing on improving the field‐assisted carrier collection is shown. This is ascribed to a decrease of the background doping in the GaInNAsSb layer. In a properly designed device for a 1.0‐eV GaInNAsSb cell, it is demonstrated that the external quantum efficiency can reach as high as 90% at wavelengths longer than the GaAs bandgap. Copyright © 2015 John Wiley & Sons, Ltd.
DOI:
10.1143/jjap.35.1273
发表时间:
1996-02-01
期刊:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
影响因子:
--
作者:
Kondow, M;Uomi, K;Yazawa, Y
通讯作者:
Yazawa, Y
DOI:
--
发表时间:
2016
期刊:
影响因子:
--
作者:
Naoya Miyashita;Nazmul Ahsan;and Yoshitaka Okada
通讯作者:
and Yoshitaka Okada