Temperature sensor using thermal transport properties in the subthreshold regime of an organic thin film transistor
Temperature sensor using thermal transport properties in the subthreshold regime of an organic thin film transistor
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DOI：
10.1063/1.2450646
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发表时间：
2007-02-05
影响因子：
4
通讯作者：
Varadan, Vijay K.
中科院分区：
文献类型：
--
作者：
Jung, Soyoun;Ji, Taeksoo;Varadan, Vijay K.
In this letter, a temperature sensor based on an organic thin film transistor is proposed and discussed in terms of its linearity and reliability of the variation in the subthreshold drain current with temperature. The saturation mobility exhibits thermally activated hopping and temperature-deactivated behavior in different temperature ranges, but the saturation current shows very little change compared to the subthreshold current that is linearly varied with temperature from 273 to 453 K. In addition, sensor reliability can be ensured by placing a time delay between consecutive measurements to release the charges trapped in the dielectric/semiconductor interface, the so-called bias-stress effect. (c) 2007 American Institute of Physics.
