Photoelectron Spectroscopy of LiV2O4 with Photons from 8.4 to 8100 eV : Bulk Sensitivity, Hybridization, and Recoil Effects
Photoelectron Spectroscopy of LiV2O4 with Photons from 8.4 to 8100 eV : Bulk Sensitivity, Hybridization, and Recoil Effects
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LiV2O4 光子 8.4 至 8100 eV 的光电子能谱：体灵敏度、杂交和反冲效应
DOI：
10.1143/jpsj.79.044711
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
and I. Nekrasov(他10名)
中科院分区：
文献类型：
--
作者：
S. Suga;A. Sekiyama;H. Fujiwara;and I. Nekrasov(他10名)
硬X射线光电子能谱和软X射线光电子能谱（HAXPES和SXPES）是研究强关联电子系统体电子结构的有力工具。清洁断裂表面上的本征表面层的存在下证明了LiV 2 O 4。在这种材料中，单核反冲效应不仅对所有芯能级而且对20 K下的价态都非常显著。然而，这种反冲效应是可以忽略的VO 2即使在350 K，尽管VO 2具有类似的V-O 6八面体结构。在高结合能的部分，所谓的O 2 p带相对于V 3d带HAXPES的显着的强度增加被解释为是由于V 4s状态的贡献。非常高的分辨率极低能量的光电子能谱（ELEPES）进行与Kr和氙灯在10.1和8.4 eV，分别，证明其体积灵敏度为这种材料与重费米子的行为。
Hard- and soft-X-ray photoelectron spectroscopies (HAXPES and SXPES) are very powerful for studying the bulk electronic structures of strongly correlated electron systems. The presence of an intrinsic surface layer on clean fractured surfaces is demonstrated for LiV2O4. In this material, single-nucleus recoil effects are very prominent not only for all core levels but also for valence states at 20 K. However, such recoil effects are negligible in VO2even at 350 K in spite of the fact that VO2has a similar V–O6octahedron structure. The marked intensity increase in the high-binding-energy part of the so-called O 2p band relative to the V 3d band in HAXPES is interpreted to be due to the V 4s state contribution. Very high resolution extremely low energy photoelectron spectroscopy (ELEPES) is performed with Kr and Xe lamps at 10.1 and 8.4 eV, respectively, demonstrating its bulk sensitivity for this material with heavy-Fermion-like behavior.