In situ electron-beam lithography on GaAs substrates using a metal alkoxide resist
In situ electron-beam lithography on GaAs substrates using a metal alkoxide resist
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使用金属醇盐抗蚀剂在 GaAs 衬底上进行原位电子束光刻
DOI：
10.1063/1.123712
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发表时间：
1999
影响因子：
4
通讯作者：
E. Hu
中科院分区：
文献类型：
--
作者：
W. Mitchell;E. Hu
用俄歇电子能谱和扫描电子显微镜研究表明，首先在低温(<；−20 °C)的GaAs001表面上凝聚多层异丙醇钛[Ti(-OC3H7)4]，然后用扫描电子束(入射能量和通量分别为10keV和0.18mC/cm~2/S)照射，是有可能在GaAs衬底上形成氧化钛薄膜的。在此条件下，电子束诱导的沉积速率是恒定的，达到了5.5mC/ /cm2的高值。当电子曝光量超过2mC/cm~2后，就会沉积出厚膜(即大于50A)，但在这些较厚的氧化膜中，碳的掺入也增加了。发现剩余的未曝光前驱体在热处理到室温时解吸，确保了选择性区域图案清晰度。在氯气中刻蚀后，观察到写入的图形有效地转移到下面的GaAs衬底上(刻蚀后的刻蚀深度为8500A)。
Using Auger electron spectroscopy and scanning electron microscopy, we have shown that it is possible to pattern thin films of titanium oxide on GaAs substrates by first condensing multilayers of titanium isopropoxide [Ti(–OC3H7)4] on a cold (<−20 °C) GaAs(001) surface and then exposing the condensed precursor film to a scanning electron beam (incident energy and flux of 10 keV and 0.18 mC/cm2/s). Under these conditions, the electron-beam-induced deposition rate was found to be constant and equal to a high value of 5.5±1.5 A/s. Deposition of thick films (i.e., greater than 50 A) results after electron exposures above 2 mC/cm2; however, increased carbon incorporation was observed within these thicker oxide films. The remaining unexposed precursor was found to desorb upon annealing to room temperature, ensuring selective area pattern definition. Efficient transfer of the written patterns to the underlying GaAs substrate was observed after etching in chlorine (etch depths of 8500 A were measured after etchin...