Topological characteristics of InAs quantum dot with GaInAs cover using Sb surfactant
Topological characteristics of InAs quantum dot with GaInAs cover using Sb surfactant
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DOI：
10.1063/1.2200395
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发表时间：
2006-05
影响因子：
4
通讯作者：
T. Matsuura;T. Miyamoto;F. Koyama
中科院分区：
文献类型：
--
作者：
T. Matsuura;T. Miyamoto;F. Koyama
利用原子力显微镜研究了Sb掺杂对GaAs衬底上InAs量子点拓扑结构的影响。发现了Sb引入的GaInAs覆盖层的尺寸增大，证实了具有窄线宽的光致发光峰值波长的延长是由于尺寸波动较小的点高度的增加。
Sb-introduced effects of the cover layer on topological properties were investigated by atomic force microscopy for InAs quantum dots on GaAs using molecular beam epitaxy. Size enlargement for an Sb-introduced GaInAs cover layer was found. Elongation of the photoluminescence peak wavelength with a narrow linewidth was confirmed as a result of the increase of the dot height with less size fluctuation.