Charging phenomena in pentacene-gold nanoparticle memory device
Charging phenomena in pentacene-gold nanoparticle memory device
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DOI：
10.1063/1.2435598
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发表时间：
2007-01-22
影响因子：
4
通讯作者：
Dodabalapur, A.
中科院分区：
文献类型：
--
作者：
Leong, W. L.;Lee, P. S.;Dodabalapur, A.
作者展示了一种新的有机存储系统，使用并五苯作为有源半导体层和柠檬酸盐稳定的金（Au）纳米颗粒作为电荷存储元件。在5 - 10 V的编程电压范围内，存储窗口为1.25 - 2.05 V，具有明显的顺时针电容-电压（C-V）滞后效应。在50 kHz-1 MHz频率范围内，电导-电压（G-V）曲线的顺时针C-V滞后窗口和电导峰半高宽几乎不变，表明正电荷的捕获/释放主要来源于Au纳米颗粒。(c)2007年，美国物理学会。
The authors demonstrate a new organic memory system, using pentacene as the active semiconductor layer and citrate-stabilized gold (Au) nanoparticles as charge storage elements. A pronounced clockwise capacitance-voltage (C-V) hysteresis is observed with a memory window of 1.25-2.05 V achievable under 5-10 V programing range. Similar clockwise C-V hysteresis window and an almost constant full width at half maximum of the conductance peaks in conductance-voltage (G-V) characteristics, obtained in the frequency range of 50 kHz-1 MHz, indicated that positive charge trapping/detrapping originated mainly from the Au nanoparticles. (c) 2007 American Institute of Physics.