The growth and characterization of ZnSe nanoneedles by a simple chemical vapor deposition method
The growth and characterization of ZnSe nanoneedles by a simple chemical vapor deposition method
复制标题
简单化学气相沉积法 ZnSe 纳米针的生长和表征
DOI：
10.1016/j.jcrysgro.2005.11.098
复制
发表时间：
2006-04-01
影响因子：
1.8
通讯作者：
Yang, L
中科院分区：
文献类型：
--
作者：
Fu, HZ;Li, HY;Yang, L
首次在 NiSe 的辅助下通过简单的化学气相沉积方法成功合成了 ZnSe 纳米针。 ZnSe纳米针的平均底部直径为400 nm，长度超过50 pm，从底部到尖端直径逐渐减小。纳米针的直径可以通过NiSe源的尺寸来控制。产物还通过XRD、HRTEM、EDS和PL光谱进行了表征。 ZnSe纳米针本质上是单晶，结晶质量高，<111>为优先生长方向。在室温下观察到 438.9 nm 附近的强发射带，这归因于激子发射。提出了氧化还原效应和 VLS 机制的组合机制来理解 ZnSe 纳米针的生长。 (c) 2005 Elsevier B.V. 保留所有权利。
ZnSe nanoneedles were successfully synthesized with the assistance of NiSe through a simple chemical vapor deposition method for the first time. The ZnSe nanoneedles, with the average bottom diameters of 400 nm and the lengths of more than 50 pm, decrease in diameters from bottom to tip. The diameter of the nanoneedle can be controlled by the size of NiSe source. The products were also characterized by XRD, HRTEM, EDS and PL spectrum. The ZnSe nanoneedles are of a single crystal in nature with high crystalline quality, and < 111 > is the preferential growth direction. A strong emission band around 438.9 nm is observed at room temperature, being attributed to the excitonic emission. A combined mechanism of the redox effect and the VLS mechanism is proposed to understand the growth of ZnSe nanoneedles. (c) 2005 Elsevier B.V. All rights reserved.