Fabrication of Defective Single Layers of Hexagonal Boron Nitride on Various Supports for Potential Applications in Catalysis and DNA Sequencing
Fabrication of Defective Single Layers of Hexagonal Boron Nitride on Various Supports for Potential Applications in Catalysis and DNA Sequencing
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DOI：
10.1021/acsanm.8b00903
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发表时间：
2018-08
影响因子：
5.9
通讯作者：
R. Kozubek;P. Ernst;C. Herbig;T. Michely;M. Schleberger
中科院分区：
文献类型：
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作者：
R. Kozubek;P. Ernst;C. Herbig;T. Michely;M. Schleberger
二维六方氮化硼（hBN）已被证明是高性能石墨烯电子器件的合适衬底和栅极材料，并已被提议用于催化和DNA测序。本研究探讨了如何将高电荷离子用于缺陷工程，即在单层hBN中局部诱导修饰。为此，我们以260 keV的固定动能，用不同电荷态（最高q = 40）的高电荷Xeq+离子照射在SiO2、Mo箔和Ir（111）上的单层hBN。利用摩擦模式原子力显微镜和二次离子质谱分析了离子诱导的纳米修饰作为电荷态的函数。数据表明，在15-17 keV的最小势能下，大于q = 28的电荷态足以通过电子激发产生缺陷。这与二氧化硅上的石墨烯（≃12 keV）相比更高，这为选择性缺陷提供了可能性。
Two-dimensional hexagonal boron nitride (hBN) has been shown to be a suitable substrate and gate material for high-performance graphene electronics and has been proposed for applications in catalysis and DNA sequencing. This study explores how highly charged ions can be used for defect engineering, i.e., to locally induce modifications in single layers of hBN. For this, we irradiated single layers of hBN on SiO2, Mo foil, and Ir(111) with highly charged Xeq+ ions of different charge states (up to q = 40) at a fixed kinetic energy of 260 keV. The ion-induced nanoscaled modifications are analyzed as a function of the charge state using atomic force microscopy in the friction force mode and secondary-ion mass spectrometry. The data show that a charge state of more than q = 28 corresponding to a minimum potential energy of 15–17 keV is sufficient to achieve defect creation via electronic excitation. This is higher in comparison to graphene on SiO2 (≃12 keV), which opens up the possibility of selective defect ...