Development of New High-Dielectric Constant Thin Films By Combinatorial Synthesis
Development of New High-Dielectric Constant Thin Films By Combinatorial Synthesis
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通过组合合成开发新型高介电常数薄膜
DOI：
10.1149/09701.0061ecst
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发表时间：
2020
期刊：
影响因子：
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通讯作者：
Nagata Takahiro
中科院分区：
文献类型：
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作者：
伊藤拓海;森駿太郎;高尾英邦;下川房男;寺尾京平;横田隆人，神田健介，藤田孝之，前中一介;上田哲也;長谷川 浩;山田寛喜;Nagata Takahiro
高介电常数薄膜材料的开发是未来有源和无源纳米电子器件的关键。利用组合合成、高通量材料开发等技术，开发了用于薄膜电容器和栅电容器的高介电常数薄膜材料。本文简要介绍了高温工作薄膜电容器和高介电常数薄膜电容器用介质材料的组合合成方法和研究成果。
The development of high-dielectric constant film materials is essential for future active and passive nanoelectronics devices. By using combinatorial synthesis, high throughput material development, we developed high-dielectric constant film materials for film capacitor and gate dielectrics. In this paper, the combinatorial synthesis method and achievements concerning the dielectric materials for high temperature operational thin film capacitor and high-k dielectrics are briefly introduced.