Charge injection phenomena at the contact interface between (5,10,15,20-tetramethylporphyrinato)cobalt(<scp>ii</scp>) and 2,5-difluoro-7,7,8,8-tetracyanoquinodimethane single crystals
Charge injection phenomena at the contact interface between (5,10,15,20-tetramethylporphyrinato)cobalt(<scp>ii</scp>) and 2,5-difluoro-7,7,8,8-tetracyanoquinodimethane single crystals
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(5,10,15,20-四甲基卟啉)钴(<scp>ii</scp>)与2,5-二氟-7,7,8,8-四氰基醌二甲烷单晶接触界面的电荷注入现象
DOI：
10.1039/d1ce00299f
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发表时间：
2021
期刊：
影响因子：
3.1
通讯作者：
Inabe Tamotsu
中科院分区：
文献类型：
--
作者：
Takahashi Yukihiro;Ishida Kenshiro;Matsuno Sarasa;Kurokawa Masashi;Shimada Takuro;Harada Jun;Inabe Tamotsu
非均相有机晶体的接触界面广泛应用于各种电子器件中。近年来，人们已经清楚，导电功能发生在异质结界面处。因此，在有机晶体表面的新功能的开发是预期的，这需要进一步的调查。在这里，我们评估的电荷转移现象和电子给体-受体晶体之间的界面处的导电性。该界面分别以（5，10，15，20-四甲基卟啉）钴（CoTMP）和2，5-二氟-7，7，8，8-四氰基醌二甲烷（F2 TCNQ）为供体和受体晶体制备。CoTMP/F2 TCNQ界面的表面电阻率非常低（3 × 105 Ω sq−1），这是迄今为止报道的此类界面的最低值之一。扫描探针显微镜和电子自旋共振测量表明，11%的电荷通过接触注入到该界面，电荷扩散距离为200 nm。该距离明显高于传统半导体器件中使用的膜厚度，从而表明该技术可以有助于有机电子学的发展。
The contact interface of heterogeneous organic crystals is used in a wide variety of electronic devices. In recent years, it has become clear that the function of electrical conduction occurs at the heterojunction interface. As a result, the development of new functions at the surface of organic crystals is expected, which requires further investigations. Herein, we assess the charge transfer phenomena and the conductivity at the interface between electron-donor–acceptor crystals. The interface is prepared using (5,10,15,20-tetramethylporphyrinato)cobalt(II) (CoTMP) and 2,5-difluoro-7,7,8,8-tetracyanoquinodimethane (F2TCNQ) as the donor and acceptor crystals, respectively. The surface resistivity of the CoTMP/F2TCNQ interface is extremely low (3 × 105 Ω sq−1), which is one of the lowest values reported thus far for this type of interface. Scanning probe microscopy and electron spin resonance measurements show that 11% of the charge is injected into this interface by contact, and the charge diffusion distance is 200 nm. This distance is significantly higher than the film thickness used in conventional semiconductor devices, thereby indicating that this technique can contribute to the development of organic electronics.