TSV Technology for Millimeter-Wave and Terahertz Design and Applications
TSV Technology for Millimeter-Wave and Terahertz Design and Applications
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DOI：
10.1109/tcpmt.2010.2099731
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发表时间：
2011-02-01
影响因子：
2.2
通讯作者：
Yuan, Xiaojun
中科院分区：
文献类型：
--
作者：
Hu, Sanming;Wang, Lei;Yuan, Xiaojun
硅通孔（TSV）技术为实现紧凑型毫米波（mmW）和太赫兹（THz）高性能系统提供了一种很有前途的选择。传输线和互连线作为该系统的基本元件，在本论文中起着非常重要的作用。一个基于TSV基片集成波导（SIW）的特点。结果表明，T型线和互连线在低于150 GHz的频率下是可行的，而基片集成波导可以在高达300 GHz的频率下相对良好地工作。此外，两个mmW分量，即，发夹型滤波器和贴片天线。结果表明，低阻硅是造成无源器件总损耗的主要原因。之后，提出了两种新的基于TSV的拓扑结构，以有效地集成天线与有源电路的毫米波和太赫兹应用。
The through silicon via (TSV) technology provides a promising option to realize a compact millimeter-wave (mmW) and terahertz (THz) system with high performance. As the fundamental elements in this system, transmission lines (T-lines) and interconnects are very important and therefore studied in this paper. A TSV-based substrate integrated waveguide (SIW) is also characterized. The results show that, the T-lines and interconnects are viable at frequencies lower than similar to 150 GHz whereas SIW can operate relatively well up to 300 GHz. In addition, two mmW components, i.e., a hairpin filter and a patch antenna, are designed by the TSV technology. Results of all the above passive components indicate that the low-resistivity silicon is the main cause of the total loss. Afterwards, two novel TSV-based topologies are proposed to efficiently integrate an antenna with active circuits for the mmW and THz applications.