Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
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DOI：
10.1126/science.1171245
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发表时间：
2009-06-05
期刊：
影响因子：
56.9
通讯作者：
Ruoff, Rodney S.
中科院分区：
文献类型：
--
作者：
Li, Xuesong;Cai, Weiwei;Ruoff, Rodney S.
石墨烯因其独特的能带结构和物理性质而引起了人们的极大兴趣。今天，石墨烯被限制在小尺寸，因为它主要是由剥离石墨生产的。我们利用甲烷化学气相沉积技术，在铜衬底上生长出了厘米量级的大面积石墨烯薄膜。薄膜主要是单层石墨烯，有一小部分（小于5%）的面积有很少的层，并且在铜表面台阶和晶界上连续。碳在铜中的低溶解度似乎有助于使这种生长过程具有自限性。我们还开发了石墨烯薄膜转移到任意衬底的工艺，并且在硅/二氧化硅衬底上制造的双门控场效应晶体管在室温下的电子迁移率高达每伏特每秒4050平方厘米。
Graphene has been attracting great interest because of its distinctive band structure and physical properties. Today, graphene is limited to small sizes because it is produced mostly by exfoliating graphite. We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single-layer graphene, with a small percentage (less than 5%) of the area having few layers, and are continuous across copper surface steps and grain boundaries. The low solubility of carbon in copper appears to help make this growth process self-limiting. We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on silicon/silicon dioxide substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature.