Defect chemistry model of the ferroelectricelectrode interface
Defect chemistry model of the ferroelectricelectrode interface
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DOI：
10.1080/10584589508220224
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发表时间：
1995-02
影响因子：
0.7
通讯作者：
C. Brennan
中科院分区：
文献类型：
--
作者：
C. Brennan
摘要 使用数值缺陷化学模型研究了电极和钛酸盐陶瓷材料之间的相互作用。与时间无关的模型求解整个铁电薄膜中电子和空穴、电离受体和氧空位浓度的稳态浓度，作为电势、温度和氧分压的函数。这些计算揭示了铁电材料中形成电活性空间电荷区域的基本机制。大气氧分压与大约一电子伏特的天然受体杂质的电离能的结合阻止了受体的完全电离。然而，受体对电场反应强烈，并且在施加零点几伏特的情况下，界面区域中电离受体的百分比范围可能从 0% 到 100%。部分电离杂质对电场的响应是所提出的机制......
Abstract The interactions between the electrodes and titanate ceramic materials are examined using numerical defect chemistry models. A time independent model solves for the steady-state concentrations of electrons and holes, ionized acceptors, and oxygen vacancy concentrations throughout the ferroelectric film as a function of electrical potential, temperature, and oxygen partial pressure. These calculations reveal a basic mechanism by which electrically active space charge regions may form in the ferroelectric material. The combination of atmospheric oxygen partial pressure with ionization energies of naturally occurring acceptor impurities of around one electron-volt prevents full ionization of the acceptors. However, the acceptors respond strongly to an electric field, and the percentage of ionized acceptors in the interface region may range from 0% to 100% with the application of a few tenths of a volt. The response of the partially ionized impurities to the electric field is the proposed mechanism f...