Photonic Crystal Devices in Silicon Photonics
Photonic Crystal Devices in Silicon Photonics
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DOI：
10.1109/jproc.2018.2853197
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发表时间：
2018-12-01
影响因子：
20.6
通讯作者：
Noda, Susumu
中科院分区：
文献类型：
--
作者：
Asano, Takashi;Noda, Susumu
在本文中，我们回顾了二维光子晶体板的历史，重点是点缺陷腔，可以同时实现超小的模式体积和高品质因子。介绍了抑制辐射损耗的一个重要设计概念：腔模场的包络不应有突变，理想情况下应遵循高斯函数。立方波长阶模态体积，实验Q因子超过11000000，通过定制的包络函数使用异质结构纳米腔。我们还讨论了光/光子操纵技术，这是由高Q值光子晶体纳米腔的出现，包括超紧凑通道添加/删除过滤器，超低阈值硅纳米腔拉曼激光器，和远纳米腔之间的强耦合通过绝热传输的光子。
In this paper, we review the history of 2-D photonic crystal slabs with a focus on point-defect cavities that can simultaneously realize ultrasmall modal volumes and ultrahigh quality factors. An important design concept to suppress radiation loss is introduced: the envelope of the cavity mode field should have no abrupt changes and should ideally follow a Gaussian function. Cubic-wavelength-order modal volumes, with experimental Q factors exceeding 11 000000, are obtained by tailoring the envelope functions using heterostructure nanocavities. We also discuss light/photon manipulation techniques, which are enabled by the emergence of high-Q photonic crystal nanocavities, including ultracompact channel add/drop filters, ultralow-threshold silicon nanocavity Raman lasers, and strong coupling between distant nanocavities via the adiabatic transfer of photons.