Fabrication of Si Nanowire Biosensor Using FIB and its Evaluations
Fabrication of Si Nanowire Biosensor Using FIB and its Evaluations
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FIB硅纳米线生物传感器的制备及其评价
DOI：
10.4028/www.scientific.net/kem.596.224
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
S. Hosaka
中科院分区：
文献类型：
--
作者：
Anh;H. Sone;S. Hosaka
采用聚焦离子束(FIB)方法制备了硅纳米线(SiNW)传感器，并研究了纳米线的宽度和线数等参数变化对SiNW电学性能的影响。采用FIB方法在具有金铬电极的绝缘体上硅片上制作了SiNW传感器。制作了最小宽度为90 nm、长度为20μm、高度为60 nm的SiNW传感器。获得了欧姆接触状态下的I-V特性，测得SiNW电阻为0.86MΩ，电阻率为0.02Ωcm。此外，还研究了电阻对宽度和线数的依赖关系。我们发现，增加导线数量和导线宽度可以增加导线的电导。
We demonstrated the fabrication of silicon nanowire (SiNW) sensors by focused ion beam (FIB) method and determined the effects of changes of nanowire parameters of width and wire-number on the SiNW electrical property. SiNW sensors were fabricated on a silicon-on-insulator (SOI) wafer with Au-Cr electrodes by the FIB method. We fabricated the SiNW sensor with a minimum width of 90 nm, length of 20 μm and height of 60 nm. The I-V characteristics in the state of ohmic contact were obtained, and the SiNW resistance was found to have 0.86 MΩ and a resistivity of 0.02 Ωcm. In addition, the electrical resistance dependence on width and wire-number was investigated. We found that wire conductance could be increased by increasing the wire-number and wire width.